vishay siliconix si1407dl document number: 71074 s-61009?rev. d, 12-jun-06 www.vishay.com 1 p-channel 1.8-v (g-s) mosfet features ?trenchfet ? power mosfets ? 1.8 v rated product summary v ds (v) r ds(on) ( ) i d (a) - 12 0.130 at v gs = - 4.5 v - 1.8 0.170 at v gs = - 2.5 v - 1.5 0.225 at v gs = - 1.8 v - 1.3 notes: a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 sec steady state unit drain-source voltage v ds - 12 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 1.8 - 1.6 a t a = 85 c - 1.4 - 1.2 pulsed drain current i dm - 5 continuous diode current (diode conduction) a i s - 0.8 - 0.8 maximum power dissipation a t a = 25 c p d 0.625 0.568 w t a = 85 c 0.400 0.295 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 sec r thja 165 200 c/w steady state 180 220 maximum junction-to-foot (drain) steady state r thjf 105 130 sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v ie w d d g d d s marking code oc xx lot tracea b ility and date code part # code y y ordering information: SI1407DL-T1 SI1407DL-T1-e3 (lead (p b )-free) a v aila b le p b -free rohs* compliant
www.vishay.com 2 document number: 71074 s-61009?rev. d, 12-jun-06 vishay siliconix si1407dl notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs, i d = - 250 a - 0.45 - 1 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v - 1 a v ds = - 12 v, v gs = 0 v, t j = 85 c - 5 on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v - 2 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 1.8 a 0.105 0.130 v gs = - 2.5 v, i d = - 1.5 a 0.140 0.170 v gs = - 1.8 v, i d = - 0.8 a 0.185 0.225 forward transconductance a g fs v gs = - 10 v, i d = - 1.8 a 4.3 s diode forward voltage a v sd i s = - 0.8 a, v gs = 0 v - 0.77 - 1.1 v dynamic b total gate charge q g v ds = - 6 v, v gs = - 4.5 v, i d = - 1.8 a 5.5 7.0 nc gate-source charge q gs 0.95 gate-drain charge q gd 1.10 tu r n - o n d e l ay t i m e t d(on) v dd = - 6 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 812 ns rise time t r 33 50 turn-off delaytime t d(off) 32 50 fall time t f 29 45 source-drain reverse recovery time t rr i f = - 0.8 a, di/dt = 100 a/s 20 40 output characteristics 0 1 2 3 4 5 012345 v gs = 5 thr u 2 v v ds ? drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d 1 v 1.5 v transfer characteristics 0 0. 8 1.6 2.4 3.2 4.0 0 0.5 1.0 1.5 2.0 2.5 t c = 125 c - 55 c 25 c v gs ? gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d ? i d
document number: 71074 s-61009?rev. d, 12-jun-06 www.vishay.com 3 vishay siliconix si1407dl typical characteristics 25 c, unless noted on-resistance vs. drain current gate charge source-drain diode forward voltage ( ) e c n a t s i s e r - n o ? r ) n o ( s d 0 0.1 0.2 0.3 0.4 0.5 012345 i d ? drain c u rrent (a) v gs = 2.5 v v gs = 1. 8 v v gs = 4.5 v 0 1 2 3 4 5 0123456 v ds = 6 v i d = 1. 8 a ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v s g 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c 5 1 0.1 v sd ? so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s ? i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 200 400 600 8 00 1000 0246 8 10 12 v ds ? drain-to-so u rce v oltage ( v ) c rss c oss c iss ) f p ( e c n a t i c a p a c ? c 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 1. 8 a t j ? j u nction temperat u re (c) ) d e z i l a m r o n ( ( ) e c n a t s i s e r - n o ? r ) n o ( s d 0 0.1 0.2 0.3 0.4 0.5 012345 i d = 1. 8 a ( ) e c n a t s i s e r - n o ? r ) n o ( s d gs ? gate-to-so u rce v oltage ( v ) i d = 0. 8 a v
www.vishay.com 4 document number: 71074 s-61009?rev. d, 12-jun-06 vishay siliconix si1407dl typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?71074. threshold voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ) v ( e c n a i r a v v ) h t ( s g t j ? temperat u re (c) single pulse power, junction-to-ambient 0 6 10 2 4 ) w ( r e w o p time (sec) 8 130 10 10 -1 10 -2 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 1 8 0 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (sec) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
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